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| Si8415DB New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.037 @ VGS = -4.5 V -12 0.046 @ VGS = -2.5 V 0.060 @ VGS = -1.8 V FEATURES ID (A) -7.3 -6.6 -5.8 19 Qg (Typ) D TrenchFETr Power MOSFET D New MICRO FOOTr Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and On-Resistance Per Footprint Area D Ultra-Low On-Resistance APPLICATIONS D Load Switch, Charger Switch, and PA Switch for Portable Devices S MICRO FOOT Bump Side View 3 D D 2 Backside View G 8415 xxx Device Marking: 8415 xxx = Date/Lot Traceability Code D Ordering Information: Si8415DB-T1--E1 S 4 G 1 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Package Reflow Conditionsb VPR IR/Convection TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State -12 "8 Unit V -7.3 -5.9 -25 -2.5 2.77 1.77 -55 to 150 215 220 -5.3 -4.3 A -1.3 1.47 0.94 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73210 S-50037--Rev. A, 17-Jan-05 www.vishay.com t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 35 72 16 Maximum 45 85 20 Unit _C/W C/W 1 Si8415DB Vishay Siliconix b. New Product Refer to IPC/JEDEC (J-STD-020A), no manual or hand soldering. SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -12 V, VGS = 0 V VDS = -12 V, VGS = 0 V, TJ = 70_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1 A VGS = -2.5 V, ID = -1 A VGS = -1.8 V, ID = -1 A VDS = -10 V, ID = -1 A IS = -1 A, VGS = 0 V -5 0.031 0.038 0.050 11 -0.8 -1.1 0.037 0.046 0.060 S V W -0.4 -1 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = -1 A, di/dt = 100 A/ms VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, Rg = 6 W f = 1 MHz VDS = -6 V, VGS = -4.5 V, ID = -1 A , , 19 1.9 4.8 19 15 32 180 115 80 25 50 270 175 120 ns W 30 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 5 thru 2.5 V 20 I D - Drain Current (A) 2V 20 I D - Drain Current (A) 25 Transfer Characteristics 15 15 10 1.5 V 5 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 TC = 125_C 5 25_C -55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 73210 S-50037--Rev. A, 17-Jan-05 2 Si8415DB New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.12 0.10 C - Capacitance (pF) 0.08 0.06 0.04 0.02 0.00 0 5 10 15 20 25 VGS = 4.5 V VGS = 1.8 V VGS = 2.5 V Vishay Siliconix On-Resistance vs. Drain Current 2500 Capacitance r DS(on) - On-Resistance ( W ) 2000 Ciss 1500 1000 Coss 500 Crss 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 1 A Gate Charge 1.4 1.3 rDS(on) - On-Resiistance (Normalized) 1.2 1.1 1.0 0.9 0.8 -50 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1 A 4 3 2 1 0 0 5 10 15 20 25 Qg - Total Gate Charge (nC) -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 0.06 ID = 1 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 73210 S-50037--Rev. A, 17-Jan-05 www.vishay.com 3 Si8415DB Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.3 V GS(th) Variance (V) 0.2 0.1 0.0 20 -0.1 -0.2 -50 ID = 250 mA 60 Power (W) 80 Single Pulse Power, Juncion-To-Ambient 40 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) 100 *rDS(on) Limited 10 I D - Drain Current (A) Safe Operating Area IDM Limited P(t) = 0.001 1 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 2 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 72_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 73210 S-50037--Rev. A, 17-Jan-05 Si8415DB New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 73210 S-50037--Rev. A, 17-Jan-05 www.vishay.com 5 Si8415DB Vishay Siliconix PACKAGE OUTLINE MICRO FOOT: 4-BUMP (2 X 2, 0.8-mm PITCH) 4 O 0.30 X 0.31 Note 3 Solder Mask O X 0.40 New Product e A A2 A1 Bump Note 2 b Diamerter e Recommended Land S Silicon E e 8415 XXX e D Mark on Backside of Die S NOTES (Unless Otherwise Specified): 1. 2. 3. 4. Laser mark on the silicon die back, coated with a thin metal. Bumps are Eutectic solder 63/57 Sn/Pb. Non-solder mask defined copper landing pad. The flat side of wafers is oriented at the bottom. MILLIMETERS* Dim A A1 A2 b D E e S Min 0.600 0.260 0.340 0.370 1.520 1.520 0.750 0.370 INCHES Min 0.0236 0.0102 0.0134 0.0146 0.0598 0.0598 0.0295 0.0146 Max 0.650 0.290 0.360 0.410 1.600 1.600 0.850 0.380 Max 0.0256 0.0114 0.0142 0.0161 0.0630 0.0630 0.0335 0.0150 * Use millimeters as the primary measurement. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73210. www.vishay.com Document Number: 73210 S-50037--Rev. A, 17-Jan-05 6 |
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